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參數(shù)資料
| 型號(hào)： | APT30GT60BR |
| 廠(chǎng)商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 64 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 202K |
| 代理商： | APT30GT60BR |
052-6211
Re
v
E
6-2008
APT30GT60BR(G)
APT40DQ60
Figure22,Turn-onSwitchingWaveformsandDefinitions
Figure23,Turn-offSwitchingWaveformsandDefinitions
T
J = 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
IC
A
D.U.T.
VCE
Figure21,InductiveSwitchingTestCircuit
VCC
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-247PackageOutline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30GT60BR_08 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:The Thunderbolt IGBT is a new generation of high voltage power IGBTs. |
| APT30GT60BRD | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT30GT60BRDL | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT30GT60BRDQ2 | 制造商:APT 功能描述: |
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