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參數(shù)資料
| 型號： | APT30GS60BRDL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 247K |
| 代理商： | APT30GS60BRDL |
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
0
0.2
0.4
0.6
0.8
1
1.2
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
.112
.437
.450
.0005
.0016
0.450
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 126°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 30A
Forward Voltage
I
F = 60A
I
F = 30A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
1.25
1.6
2.0
1.25
APT30GS60BRDL(G)
30
51
320
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
64
-
317
-
962
-
7
-
561
-
2244
-
9
-
264
-
3191
-
26
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 30A, diF/dt = -200A/μs
V
R = 400V, TC = 25°C
I
F =30A, diF/dt = -200A/μs
V
R = 400V, TC = 125°C
I
F = 30A, diF/dt = -1000A/μs
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
DYNAMIC CHARACTERISTICS
APT30GS60BRDL(G)
052-6353
Re
v
A
7-2008
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT30GS60BRDQ2G | 功能描述:IGBT 600V 54A 250W SOT227 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT30GS60KR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT30GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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