型號: | APT30GP60JDQ1G |
元件分類: | IGBT 晶體管 |
英文描述: | 67 A, 600 V, N-CHANNEL IGBT |
封裝: | ROHS COMPLIANT, ISOTOP-4 PIN |
文件頁數(shù): | 9/9頁 |
文件大?。?/td> | 448K |
代理商: | APT30GP60JDQ1G |
相關(guān)PDF資料 |
PDF描述 |
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APT30GT60BR | 64 A, 600 V, N-CHANNEL IGBT, TO-247AD |
APT30M36JFLL | 76 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
APT40GP60JDF2 | 86 A, 600 V, N-CHANNEL IGBT |
APT40GU60JU3 | 86 A, 600 V, N-CHANNEL IGBT |
APT40M70LVR | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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APT30GP60LDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
APT30GP60LDLG | 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TO264 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A TO-264 |
APT30GS60BRDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |