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參數(shù)資料
| 型號： | APT20GF120KR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 73K |
| 代理商： | APT20GF120KR |
052-6205
Rev
D
6-2002
APT20GF120KR
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.5VCES
IC = IC2
RG = 10
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +25°C
VCE = 20V, IC = IC2
MIN
TYP
MAX
1050
1210
100
150
63
110
95
140
13
20
62
90
15
30
67
130
92
140
93
190
17
34
30
60
105
160
71
140
1.3
3.0
1.5
3.0
2.7
5.0
17
30
35
70
93
140
70
140
2.4
5.0
12
UNIT
pF
nC
ns
mJ
ns
mJ
S
UNIT
°C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.63
80
0.07
1.9
10
1.1
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
Symbol
RΘJC
RΘJA
WT
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C = IC2, RGE = 25, L = 110H, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
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