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參數(shù)資料
| 型號(hào)： | APT10021JFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 156K |
| 代理商： | APT10021JFLL |
050-7035
Rev
C
4-2004
Typical Performance Curves
APT10021JFLL
100
90
80
70
60
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
5V
5.5V
6V
6.5
VGS =15 &10V
7V
8V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS(ON) MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS(TH)
,THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
I
D = 18.5A
V
GS = 10V
NORMALIZED TO
V
GS = 10V @ ID = 18.5A
0
5
10
15
20
25
30
0
12345678
0
20
40
60
80
100
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON)vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, R
DS(ON) vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
180
160
140
120
100
80
60
40
20
0
40
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
0.0244
0.133
0.0218
0.0731F
0.701F
20.065F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
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