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參數(shù)資料
| 型號： | APM9948KC-TRG |
| 廠商： | ANPEC ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 60 V, 0.085 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | GREEN, SOP-8 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 108K |
| 代理商： | APM9948KC-TRG |
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
2
APM9948K
Absolute Maximum Ratings (T
A = 25°C unless otherwise noted)
Electrical Characteristics (T
A = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±20
V
ID*
Continuous Drain Current
4
IDM*
300
s Pulsed Drain Current
VGS=10V
16
A
IS*
Diode Continuous Forward Current
2.5
A
TJ
Maximum Junction Temperature
150
TSTG
Storage Temperature Range
-55 to 150
°C
TA=25°C
2
PD*
Maximum Power Dissipation
TA=100°C
0.8
W
RθJA*
Thermal Resistance-Junction to Ambient
62.5
°C/W
Note:
*Surface Mounted on 1in
2 pad area, t
≤ 10sec.
APM9948K
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250
A
60
V
VDS=48V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
TA=85°C
30
A
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250
A
1
1.9
3
V
IGSS
Gate Leakage Current
VGS=±16V, VDS=0V
±10
A
VGS=10V, IDS=4A
60
85
RDS(ON)
a
Drain-Source On-state Resistance
VGS=4.5V, IDS=3A
72
100
m
Diode Characteristics
VSD
a
Diode Forward Voltage
ISD=2.5A, VGS=0V
0.8
1.1
V
trr
Reverse Recovery Time
28
ns
Qrr
Reverse Recovery Charge
ISD=4A, dlSD/dt=100A/
s
28
nC
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|---|---|
| APM9953 | 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET |
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| APM9953KC-TU | 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET |
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