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參數(shù)資料
| 型號(hào)： | AP9997GP |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 146K |
| 代理商： | AP9997GP |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower Gate Charge
RDS(ON)
120mΩ
▼ Fast Switching Characteristic
ID
11A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.6
℃
/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
62
℃
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
34.7
-55 to 150
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current, VGS @ 10V
7
Pulsed Drain Current
1
30
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
11
Parameter
Rating
Drain-Source Voltage
100
AP9997GP
RoHS-compliant Product
200812242
1
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
G
D
S
TO-220(P)
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相關(guān)代理商/技術(shù)參數(shù) |
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| AP9997GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP99T03GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Ultra-low On-resistance |
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