- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51260 > AP9970GK (ADVANCED POWER ELECTRONICS CORP) 5.8 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | AP9970GK |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5.8 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 125K |
| 代理商： | AP9970GK |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.05
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=5A
-
50
mΩ
VGS=4.5V, ID=3A
-
60
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=60V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=48V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=5A
-
11.5
15
nC
Qgs
Gate-Source Charge
VDS=48V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
td(on)
Turn-on Delay Time
2
VDS=30V
-
6
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22.5
-
ns
tf
Fall Time
RD=30Ω
-6
-
ns
Ciss
Input Capacitance
VGS=0V
-
910
1450
pF
Coss
Output Capacitance
VDS=25V
-
95
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=2.1A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=5A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
31
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9970GK
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP9971GP | 25 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP9971GS | 25 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP9973GH | 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP9973GJ | 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP9974BGP | 65 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9970GK-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9970GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9970GW-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9971AGD | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9971AGH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。