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參數(shù)資料
| 型號(hào)： | AP9962J |
| 廠(chǎng)商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強(qiáng)模式 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | AP9962J |
AP9962H/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=20A
V
G
=10V
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
I
D
T
C
=25
o
C
10V
8.0V
6.0V
4.5V
V
G
=3.0V
12
16
20
24
28
32
36
3
4
5
6
7
8
9
10
11
V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=20A
T
C
=25
o
C
0
20
40
60
80
100
120
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
T
C
=150
o
C
V
G
=3.0V
10V
8.0V
6.0V
4.5V
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
G
(
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AP9962M | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9963AGS-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963GI-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963GP-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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