參數(shù)資料
型號: AP9932GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.04 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, SOP-8
文件頁數(shù): 6/7頁
文件大?。?/td> 96K
代理商: AP9932GM
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP9932GM
0
3
6
9
12
15
18
21
012
3
45
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
- 10V
-7.0V
-5.0V
-4.5V
V G = - 2.5V
T A =25
o C
0
3
6
9
12
15
18
21
01
23
45
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
V G = - 2.5V
-10V
-7.0V
-5.0V
-4.5V
T A = 150
o C
55
65
75
85
95
02
46
8
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
ΩΩΩΩ
)
I D =-2A
T A =25
o C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(
ON)
I D =-3A
V G = -4.5 V
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
0
0.5
1
1.5
2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(
th)
(V
)
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