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參數(shù)資料
| 型號： | AP9930M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | 2N AND 2P-CHANNEL ENHANCEMENT |
| 中文描述： | 2N和二路溝道增強 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 105K |
| 代理商： | AP9930M |
AP9930M
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 135
℃
/W
0.02
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-
D
(
T
A
=25
o
C
Single Pulse
1s
1ms
10ms
100ms
DC
10
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
Q
G
, Total Gate Charge (nC)
-
G
I
D
=-5A
V
DS
=-15V
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
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