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參數(shù)資料
| 型號(hào)： | AP9930AGM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30 V, 0.035 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大?。?/td> | 120K |
| 代理商： | AP9930AGM |
AP9930AGM
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
7
0
200
400
600
800
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
02468
10
12
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =-3A
V DS =-15V
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 186℃/W
t
T
0.02
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
100us
1ms
10ms
100ms
1s
DC
T A =25
o C
Single Pulse
Operation in this
area limited by
RDS(ON)
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