- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375354 > AP9926EM-A (ADVANCED POWER ELECTRONICS CORP) N-CHANNEL ENHANCEMENT MODE POWER MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | AP9926EM-A |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | AP9926EM-A |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
16
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.01
-
V/
℃
R
DS(ON)
V
GS
=4.5V, I
D
=6A
-
-
27
m
Ω
V
GS
=2.5V, I
D
=5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=6A
V
DS
=16V, V
GS
=0V
V
DS
=12V ,V
GS
=0V
V
GS
=±12V
I
D
=6A
V
DS
=10V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
R
G
=3.3
Ω
,
V
GS
=10V
R
D
=10
Ω
V
GS
=0V
V
DS
=16V
f=1.0MHz
f=1.0MHz
-
-
40
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
-
-
-
1.2
-
V
S
uA
13
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
-
-
-
-
-
-
-
-
-
-
1
25
±10
22
-
-
-
-
-
Drain-Source Leakage Current (T
j
=70
o
C)
uA
uA
nC
nC
nC
ns
ns
ns
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
14
1.4
7
10
13
26
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
-
-
-
-
8
-
ns
420
280
120
3
670
-
-
-
pF
pF
pF
Ω
Source-Drain Diode
Symbol
V
SD
Parameter
Test Conditions
I
S
=1.7A, V
GS
=0V
Min.
-
Typ.
-
Max. Units
1.2
Forward On Voltage
2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135
℃
/W when mounted on Min. copper pad.
AP9926EM-A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP9926GEM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926GO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926O | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926TGO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9926EO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFETs from APEC provide the designer with the best combination of fast switching |
| AP9926GEM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926GEO | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
| AP9926GEO-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
| AP9926GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low Gate Charge,Surface mount package |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。