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參數(shù)資料
| 型號： | AP9576GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 60 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 99K |
| 代理商： | AP9576GH |
AP9576GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
0
10
20
30
0246
8
10
12
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
0
10
20
30
02
46
8
10
12
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C = 150
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
80
85
90
95
100
246
8
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-8 A
T C =25
o C
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D = - 10 A
V G = - 10V
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9576GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9577GI | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9578GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9578GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9578GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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