參數(shù)資料
型號: AP9565AGH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 18.5 A, 40 V, 0.042 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 2/4頁
文件大?。?/td> 97K
代理商: AP9565AGH
AP9565AGH/J
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-12A
-
42
m
VGS=-4.5V, ID=-9A
-
60
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-16A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=125
oC) VDS=-32V, VGS=0V
-
-250
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=-16A
-
12
18
nC
Qgs
Gate-Source Charge
VDS=-32V
-
2.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6.9
-
nC
td(on)
Turn-on Delay Time
2
VDS=-20V
-
8
-
ns
tr
Rise Time
ID=-16A
-
34
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
26
-
ns
tf
Fall Time
RD=1.25Ω
-74
-
ns
Ciss
Input Capacitance
VGS=0V
-
850
1360
pF
Coss
Output Capacitance
VDS=-25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=-16A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time
2
IS=-16A, VGS=0V,
-
26
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3.Surface mounted on 1 in
2 copper pad of FR4 board
2
相關(guān)PDF資料
PDF描述
AP9569GM 40 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
AP9576GH 14 A, 60 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9576GJ 14 A, 60 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
AP9579GI-HF 26.8 A, 60 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP9620AGM-HF 9 A, 20 V, 0.021 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP9565AGJ 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
AP9565BGM-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9565GEH 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower On-resistance
AP9565GEM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Fast Switching Characteristic
AP9566 功能描述:電源排插 Rack PDU Basic 1U 16A 208V RoHS:否 制造商:Wiremold 出口數(shù)量: 浪涌能量額定值: 數(shù)據(jù)線路保護(hù):N 電線長度:15 ft 安裝風(fēng)格: 輸出電壓:120 V 電流額定值:15 A