- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57941 > AP55T10GH-HF (ADVANCED POWER ELECTRONICS CORP) 56 A, 100 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 PDF資料下載
參數(shù)資料
| 型號： | AP55T10GH-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 56 A, 100 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 57K |
| 代理商： | AP55T10GH-HF |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=40A
-
16.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=40A
-
63
100
nC
Qgs
Gate-Source Charge
VDS=80V
-
23
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
30
-
nC
td(on)
Turn-on Delay Time
2
VDS=50V
-
20
-
ns
tr
Rise Time
ID=10A
-
35
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-30
-
ns
tf
Fall Time
VGS=10V
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
3300
5280
pF
Coss
Output Capacitance
VDS=25V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
190
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
-
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=40A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=10A, VGS=0V
-
70
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
220
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP55T10GH-HF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP55T10GP-HF | 56 A, 100 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP562-F | 3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| AP60L02GH | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP60L02GJ | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP60T03GI | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP55T10GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP55T10GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP55T10GS-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP5602 | 制造商:Schneider Electric 功能描述:APC - Bulk |
| AP561 | 功能描述:射頻放大器 2300-2900MHz 12dB RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。