參數(shù)資料
型號： AP4523GM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 40 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁數(shù)： 5/7頁
文件大?。?/td> 133K
代理商： AP4523GM
AP4523GM
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
Q
VG
4.5V
QGS
QGD
QG
Charge
0
4
8
12
16
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V
)
I D =5A
V DS =30V
10
100
1000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C is
C oss
C rss
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rma
li
zed
Therma
lR
esp
o
n
se
(R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
10
20
30
012345
V GS , Gate-to-Source Voltage (V)
I
D
,
Dra
in
C
u
rre
nt
(A
)
T j =150
o C
T j =25
o C
V DS =5V
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