參數(shù)資料
型號(hào)： AP4434GM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類(lèi)： JFETs
英文描述： 20 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 176K
代理商： AP4434GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low on-resistance
BVDSS
20V
▼ Capable of 2.5V gate drive
RDS(ON)
18.5mΩ
▼ Surface mount package
ID
8.3A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
℃/W
Data and specifications subject to change without notice
AP4434GM
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
20
Gate-Source Voltage
±12
Continuous Drain Current
3,V
GS @ 4.5V
8.3
Continuous Drain Current
3,V
GS @ 4.5V
6.7
Pulsed Drain Current
1
30
Total Power Dissipation
2
Linear Derating Factor
0.02
Storage Temperature Range
-55 to 150
Operating Junction Temperature Range
-55 to 150
Thermal Data
Parameter
200607072-1/4
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
S
G
D
SO-8
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參數(shù)描述
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