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參數(shù)資料
| 型號： | AP4419GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 25 A, 35 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 72K |
| 代理商： | AP4419GJ |
AP4419GH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-35
-
-
V
ΔB
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
Static Drain-Source On-Resistance
2
-
-0.02
-
V/
℃
R
DS(ON)
V
GS
=-10V, I
D
=-16A
-
-
38
m
Ω
V
GS
=-4.5V, I
D
=-12A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-16A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
= ±20V
I
D
=-16A
V
DS
=-30V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-16A
R
G
=3.3
Ω,
V
GS
=-10V
R
D
=0.9
Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
-
-
68
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-3
-
-1
-25
±100
20
-
-
-
-
-
-
1120
-
-
15
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
14
-
-
-
12
3
8
12
40
46
56
700
180
150
10
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
Typ.
-
27
Max.
-1.3
-
Units
V
ns
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=-16A, V
GS
=0V
I
S
=-16A, V
GS
=0V,
dI/dt=-100A/μs
Reverse Recovery Charge
-
17
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
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