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參數(shù)資料
| 型號(hào)： | AP4415GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 24 A, 35 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | AP4415GJ |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP4415GH/J
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
0
10
20
30
40
Q
G
, Total Gate Charge (nC)
-
G
D
= -16A
V
DS
= -24V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-
D
(
T
c
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP4415GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4417GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4417GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4418GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4418GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4415GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4416GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP4417GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4417GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4418GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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