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參數(shù)資料
| 型號： | AP4412GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 7 A, 25 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 77K |
| 代理商： | AP4412GM |
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4/6
AP4412GM
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
(V)
I
D
(
T
C
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=125
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0
1
2
3
4
5
6
7
8
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
0
1
2
3
0
50
100
150
T
c ,
Case Temperature (
o
C)
P
D
(
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP4412M | N-CHANNEL ENHANCEMENT MODE |
| AP4413M | P-CHANNEL ENHANCEMENT MODE |
| AP4415GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4412M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP4413GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4413M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4415GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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