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參數(shù)資料
| 型號(hào)： | AP40T03GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 28 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 69K |
| 代理商： | AP40T03GJ |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
650
-
-
V
ΔB
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
-
0.6
-
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=5A
-
-
1
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=±30V
I
D
=10A
V
DS
=520V
V
GS
=10V
V
DD
=320V
I
D
=10A
R
G
=10
Ω,
V
GS
=10V
R
D
=32
Ω
V
GS
=0V
V
DS
=15V
f=1.0MHz
2
-
4
V
Forward Transconductance
-
-
4.8
-
-
S
uA
Drain-Source Leakage Current (T
j
=25
o
C)
10
Drain-Source Leakage Current (T
j
=150
o
C)
-
-
-
-
-
-
-
-
-
-
-
-
100
±100
-
-
-
-
-
-
-
-
uA
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
nA
nC
nC
nC
ns
ns
ns
ns
pF
53
10
15
16
20
82
36
2770
Output Capacitance
Reverse Transfer Capacitance
-
-
320
8
-
-
pF
pF
Source-Drain Diode
Symbol
V
SD
trr
Qrr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
610
8.64
Max.
1.5
-
-
Units
V
ns
μC
Forward On Voltage
3
I
S
=10A, V
GS
=0V
I
S
=10A, V
GS
=0V,
dI/dt=100A/μs
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=1.2mH , R
G
=25
Ω
, I
AS
=10A.
3.Pulse width <300us , duty cycle <2%.
AP2761I-A
2/4
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| AP40T03GI | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03GP | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03GS | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP40T03GJ-HF-3TB | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 25MOHM TO-251 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-251 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-251, Transistor Polarity:N Channel, Continuous Drai |
| AP40T03GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03H | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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