參數(shù)資料
型號(hào): AP30G120W
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: IGBT 晶體管
英文描述: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
中文描述: 60 A, 1200 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, TO-3P, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 84K
代理商: AP30G120W
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
Fig 6. Typical Capacitance Characterisitics
2/3
AP30G120W
0
40
80
120
160
0
3
6
9
12
V
CE
, Collector-Emitter Voltage (V)
I
C
20V
18V
15V
12V
V
GE
=10V
T
C
=25
o
C
0
20
40
60
80
100
0
3
6
9
12
V
CE
, Collector-Emitter Voltage (V)
I
C
20V
18V
15V
12V
V
GE
=10V
1
2
3
4
5
6
0
40
80
120
160
Junction Temperature (
o
C)
V
C
S
I
C
=60A
I
C
=30A
V
GE
=15V
0.5
0.8
1.1
1.4
-50
0
50
100
150
Junction Temperature (
o
C )
N
G
T
C
=150
o
C
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
V
CE
, Collector-Emitter Voltage (V)
I
C
V
GE
=15V
T
C
=25
1
100
10000
1
10
100
V
CE
, Collector-Emitter Voltage (V)
C
f=1.0MHz
C
ies
C
oes
C
res
T
C
=150
相關(guān)PDF資料
PDF描述
AP30N30W N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3302H N-CHANNEL ENHANCEMENT MODE
AP3302J N-CHANNEL ENHANCEMENT MODE
AP3303H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3303J N-CHANNEL ENHANCEMENT MODE POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP30G40GEO-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30N30W 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30N30WI 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30P10GH-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30P10GI 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET