參數(shù)資料
型號: AP2210
廠商: BCD Semiconductor Manufacturing Limited
英文描述: 300mA RF ULDO REGULATOR
中文描述: 300mA的射頻ULDO調(diào)節(jié)器
文件頁數(shù): 6/22頁
文件大小: 218K
代理商: AP2210
300mA RF ULDO REGULATOR AP2210
Data Sheet
6
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
Parameter
Symbol
Conditions
Min
Typ
Max
0.4
Unit
Enable Input Logic-low Voltage
V
IL
Regulator shutdown
V
0.18
Enable Input Logic-high Voltage
V
IH
Regulator enabled
V
IL
0.4V
V
IL
0.18V
V
IL
2.0V
V
IL
2.0V
2.0
V
Enable Input Logic-low Current
I
IL
0.01
1
μ
A
2
Enable Input Logic-high Current
I
IH
5
20
μ
A
25
Note 2: Specifications in bold type are limited to
-40
o
C
T
J
125
o
C. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T
J
=25
o
C) or 2% (-
40
o
C
T
J
125
o
C)
below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Electrical Characteristics (Continued)
AP2210-2.5 Electrical Characteristics
V
IN
=3.5V, I
OUT
=100
μ
A, C
IN
=1.0
μ
F, C
OUT
=2.2
μ
F, V
EN
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
T
J
125
o
C (Note 2),
unless
otherwise specified.
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