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參數(shù)資料
| 型號： | AOL1413 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 38 A, 30 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | GREEN, ULTRASO-8, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 138K |
| 代理商： | AOL1413 |
AOL1413
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
-1
TJ=55°C
-5
IGSS
±10
uA
VGS(th)
-1.5
-2.5
-3.5
V
ID(ON)
-70
A
13.5
17
TJ=125°C
18.5
24
28
36
gFS
27
S
VSD
-0.72
-1
V
IS
-38
A
Ciss
1760
2200
pF
Coss
360
pF
Crss
255
pF
Rg
6.4
8
Qg(10V)
30
38
nC
Qg(4.5V)
11
nC
Qgs
7nC
Qgd
8nC
tD(on)
11.5
ns
tr
8ns
tD(off)
35
ns
tf
18.5
ns
trr
24
30
ns
Qrr
16
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
ID=-250uA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
Reverse Transfer Capacitance
IF=-20A, dI/dt=100A/s
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
Gate Threshold Voltage
VDS=VGS ID=-250A
VDS=-30V, VGS=0V
VDS=0V, VGS= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
RDS(ON)
Static Drain-Source On-Resistance
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
IS=1A,VGS=0V
VDS=-5V, ID=20A
VGS=-5V, ID=-20A
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
Turn-On DelayTime
Total Gate Charge
Gate Drain Charge
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Gate Source Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-20A
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
* This device is guaranteed green after date code 8P11 (June 1
ST 2008)
Rev3:April, 2008
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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