參數(shù)資料
型號: AOB430Y
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù): 4/5頁
文件大小: 129K
代理商: AOB430Y
AOB430Y
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
0
100
200
300
400
500
600
700
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
40
80
120
160
200
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
P
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
J
T
C
oss
C
rss
V
DS
=30V
I
D
=12A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=3°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
A
=25°C
0.1
1
10
100
1000
0.1
1
10
100
1000
V
(Volts)
I
D
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
10
μ
s
100
μ
s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C, T
A
=25°C
Alpha & Omega Semiconductor, Ltd.
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