參數(shù)資料
型號: AO8814L
廠商: ALPHA
英文描述: Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 常見的漏雙N溝道增強(qiáng)型場效應(yīng)晶體管
文件頁數(shù): 3/4頁
文件大?。?/td> 122K
代理商: AO8814L
AO8814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
I
D
(
V
GS
=1.5V
V
GS
=2V
3V
4V
10V
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
25°C
125°C
V
DS
=5V
0
10
20
30
40
50
0
5
10
15
20
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
(
)
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
V
GS
=10V
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
V
GS
=4.5V
I
D
=7A
V
GS
=2.5V
I
D
=6A
V
GS
=1.8V
I
D
=5A
V
GS
=10V
I
D
=7.5A
10
20
30
40
50
60
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
(
)
25°C
125°C
I
D
=7.5A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
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