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參數(shù)資料
| 型號： | AO4620 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 188K |
| 代理商： | AO4620 |
AO4620
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
1.3
1.6
3
V
ID(ON)
30
A
20
24
TJ=125°C
26
32
29
36
m
gFS
24
S
VSD
0.77
1
V
IS
2.5
A
ISM
30
A
Ciss
660
792
pF
Coss
110
pF
Crss
87
pF
Rg
0.8
1.5
Qg(10V)
11.3
14.125
nC
Qg(4.5V)
5.7
nC
Qgs
2.1
nC
Qgd
3
nC
tD(on)
4.5
ns
tr
3.1
ns
tD(off)
15.1
ns
tf
2.7
ns
trr
15.5
20
ns
Qrr
7.1
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
VGS=10V, VDS=15V, RL=2.1,
RGEN=3
DYNAMIC PARAMETERS
VGS=10V, VDS=15V, ID=7.2A
Total Gate Charge
Gate Drain Charge
Reverse Transfer Capacitance
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
m
VGS=4.5V, ID=5A
IS=1A,VGS=0V
VDS=5V, ID=7.2A
VGS=10V, ID=7.2A
Gate Threshold Voltage
Drain-Source Breakdown Voltage
ID=250A, VGS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
VDS=VGS ID=250A
VDS=30V, VGS=0V
VDS=0V, VGS= ±20V
N-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
Pulsed Body-Diode Current
B
Body Diode Reverse Recovery Time
Gate resistance
VGS=0V, VDS=0V, f=1MHz
IF=7.2A, dI/dt=100A/s
VGS=10V, VDS=5V
Forward Transconductance
Diode Forward Voltage
Output Capacitance
Turn-On DelayTime
On state drain current
Maximum Body-Diode Continuous Current
Input Capacitance
Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/s
Total Gate Charge
Gate Source Charge
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating.
Rev 5: Oct 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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