參數(shù)資料
型號(hào)： AO3419
廠商： ALPHA AND OMEGA SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： GREEN PACKAGE-3
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 168K
代理商： AO3419
AO3419
Symbol
Min
Typ
Max
Units
BVDSS
-20
V
-0.5
TJ=55°C
-2.5
±1
A
±10
A
VGS(th)
-0.7
-0.9
-1.4
V
ID(ON)
-15
A
59
75
TJ=125°C
83
105
76
95
m
111
145
m
225
m
gFS
6.8
S
VSD
-1
-0.81
V
IS
-2
A
Ciss
512
620
pF
Coss
77
pF
Crss
62
pF
Rg
9.2
13
Qg
5.5
6.6
nC
Qgs
0.8
nC
Qgd
1.9
nC
tD(on)
5
ns
tr
6.7
ns
tD(off)
28
ns
tf
13.5
ns
trr
9.8
12
ns
Qrr
2.7
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
ID=-250A, VGS=0V
VGS=-2.5V, ID=-1A
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-3.5A
Reverse Transfer Capacitance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
Α
Gate Threshold Voltage
VDS=VGS ID=-250A
VDS=-16V, VGS=0V
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
VDS=0V, VGS=±10V
IGSS
m
VGS=-4.5V, ID=-3A
IS=-1A,VGS=0V
VDS=-5V, ID=-3.5A
VGS=-1.8V, ID=-0.5A
IF=-3.5A, dI/dt=100A/s
VGS=0V, VDS=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-10V, ID=-3.5A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-10V, RL=2.8,
RGEN=3
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Gate-Body leakage current
Gate resistance
VGS=0V, VDS=0V, f=1MHz
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev 4: Nov. 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相關(guān)PDF資料
PDF描述
AO4407 12000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AO4449 7000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AO4454 6500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AO4456 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AO4466 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO3419_101 功能描述:MOSFET P-CH 20V SOT23 制造商:alpha & omega semiconductor inc. 系列:- 零件狀態(tài):最後搶購(gòu) 標(biāo)準(zhǔn)包裝:3,000
AO3419L 制造商:AOS 功能描述:MOSFET
AO3420 功能描述:MOSFET N-CH 20V 6A SOT23 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
AO3420_11 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET
AO3420L 制造商:Alpha & Omega Semiconductor 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*