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參數(shù)資料
| 型號(hào)： | AN79M52F |
| 廠商： | PANASONIC CORP |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):0.018ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No |
| 中文描述： | 5.2 V FIXED NEGATIVE REGULATOR, PSFM3 |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | AN79M52F |
V
O
–9.35
V
–9
V
O
V
REG
IN
80
50
mV
mV
mV
mV
mA
mA
mA
μ
V
7
2
REG
L
25
10
2
I
Bias
225
V
no
dB
0.8
0.4
–9.45
180
90
4
58
–8.65
–8.55
RR
V
1.1
mA
mA
50
1000
–0.6
I
Electrical Characteristics (Ta=25C)
·
AN79M09/AN79M09F (–9V Type)
Parameter
Symbol
Condition
min
typ
max
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias current fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output short circuit current
Peak output current
Output voltage temperature coefficient
Unit
V
I
=–11.5 to –26V,
I
O
=5 to 350mA, P
D
*
V
I
=–11.5 to –26V, T
j
=25C
V
I
=–12 to –22V, T
j
=25C
I
O
=5 to 500mA, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
T
j
=25C
V
I
=–11.5 to –26V, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
f=10Hz to 100kHz, Ta=25C
V
=–12 to –22V, I
O
=100mA,
f=120Hz, Ta=25C
T
j
=25C
V
I
=–35V, T
j
=25C
T
j
=25C
I
O
=5mA, T
j
=0 to 125C
I
O (Short)
I
O (peak)
V
O
/Ta
Note 1) The specified condition T
j
=25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, V
=–15V, I
O
=350mA, C
I
=2
μ
F, C
O
=1
μ
F and T
j
=0 to 125C
* AN79M09 : 15W, AN79M09F : 10.25W
T
j
=25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
mV/C
<
V
O
–10.4
V
–10
V
O
V
REG
IN
80
50
mV
mV
mV
mV
mA
mA
mA
μ
V
REG
L
2
I
Bias
250
V
no
dB
0.8
0.4
–10.5
200
100
4
58
–9.6
–9.5
RR
V
1.1
mA
mA
50
1000
–0.7
7
2
25
10
Parameter
Symbol
Condition
min
typ
max
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias current fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output short circuit current
Peak output current
Output voltage temperature coefficient
Unit
V
I
=–12.5 to –27V,
I
O
=5 to 350mA, P
D
*
V
I
=–12.5 to –27V, T
j
=25C
V
I
=–13 to –23V, T
j
=25C
I
O
=5 to 500mA, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
T
j
=25C
V
I
=–12.5 to –27V, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
f=10Hz to 100kHz, Ta=25C
V
=–13to –23V, I
O
=100mA,
f=120Hz, Ta=25C
T
j
=25C
V
I
=–35V, T
j
=25C
T
j
=25C
I
O
=5mA, T
j
=0 to 125C
I
O (Short)
I
O (peak)
V
O
/Ta
Note 1) The specified condition T
=25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, V
=–16V, I
O
=350mA, C
I
=2
μ
F, C
O
=1
μ
F and T
j
=0 to 125C
* AN79M10 : 15W, AN79M10F : 10.25W
T
j
=25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
mV/C
·
AN79M10/AN79M10F (–10V Type)
<
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