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V
O
V
O
18.7
18.9
V
V
18
REG
IN
100
50
360
180
mV
mV
mV
mV
mA
mA
mA
μ
V
18
13
REG
L
30
10
2.8
I
bias
90
65
V
no
RR
dB
V
0.8
0.5
5
53
17.3
17.1
2
mA
mA
300
500
–1.0
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias current fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output short circuit current
Peak output current
Output voltage temperature coefficient
Parameter
Symbol
Condition
min
typ
max
Unit
V
I
=21to 33V, I
O
=5 to 200mA
V
I
=21to 33V, T
j
=25C
V
I
=22 to 33V, T
j
=25C
I
O
=1 to 300mA, T
j
=25C
I
O
=5 to 200mA, T
j
=25C
T
j
=25C
V
I
=21 to 33V, T
j
=25C
I
O
=1 to 300mA, T
j
=25C
f=10Hz to 100kHz
V
I
=22 to 32V, I
O
=50mA, f=120Hz
I
O
=300mA, T
j
=25C
V
I
=35V, T
j
=25C
T
j
=25C
I
O
=5mA, T
j
=0 to 125C
T
j
=25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
I
O (Short)
I
O (Peak)
V
O
/Ta
mV/C
Note 1) The specified condition T
j
=25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, V
I
=27V, I
O
=100mA, C
I
=0.33
μ
F, C
O
=0.1
μ
F, T
j
=0 to 125C
I
Electrical Characteristics (Ta=25C)
·
AN78N18 (18V Type)
V
O
V
O
20.8
21
V
V
20
REG
IN
100
50
400
200
mV
mV
mV
mV
mA
mA
mA
μ
V
19
14
REG
L
30
10
2.8
I
bias
100
64
V
no
RR
dB
V
0.8
0.5
5
52
19.2
19.0
2
mA
mA
300
500
–1.2
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias current fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output short circuit current
Peak output current
Output voltage temperature coefficient
Parameter
Symbol
Condition
min
typ
max
Unit
V
I
=23 to 35V, I
O
=5 to 200mA
V
I
=23 to 35V, T
j
=25C
V
I
=24 to 35V, T
j
=25C
I
O
=1 to 300mA, T
j
=25C
I
O
=5 to 200mA, T
j
=25C
T
j
=25C
V
I
=23 to 35V, T
j
=25C
I
O
=1 to 300mA, T
j
=25C
f=10Hz to 100kHz
V
I
=24 to 34V, I
O
=50mA, f=120Hz
I
O
=300mA, T
j
=25C
V
I
=35V, T
j
=25C
T
j
=25C
I
O
=5mA, T
j
=0 to 125C
T
j
=25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
I
O (Short)
I
O (Peak)
V
O
/Ta
mV/C
Note 1) The specified condition T
j
=25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, V
I
=29V, I
O
=100mA, C
I
=0.33
μ
F, C
O
=0.1
μ
F, T
j
=0 to 125C
·
AN78N20 (20V Type)