參數(shù)資料
型號: AN78N04
廠商: PANASONIC CORP
元件分類: 基準電壓源/電流源
英文描述: 3-pin Positive Output Voltage Regulator (300mA Type)
中文描述: 4 V FIXED POSITIVE REGULATOR, PSFM3
封裝: TO-126, 3 PIN
文件頁數(shù): 5/9頁
文件大?。?/td> 64K
代理商: AN78N04
V
O
V
O
9.35
9.45
V
V
9
REG
IN
90
45
mV
mV
mV
mV
mA
mA
mA
μ
V
14
9
REG
L
25
10
2.8
I
bias
60
68
V
no
RR
dB
V
0.8
0.5
180
90
5
56
8.65
8.55
2
mA
mA
300
500
– 0.5
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias current fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output short circuit current
Peak output current
Output voltage temperature coefficient
Parameter
Symbol
Condition
min
typ
max
Unit
V
I
=11.5 to 24V, I
O
=5 to 200mA
V
I
=11.5 to 25V, T
j
=25C
V
I
=13 to 24V, T
j
=25C
I
O
=1 to 300mA, T
j
=25C
I
O
=5 to 200mA, T
j
=25C
T
j
=25C
V
I
=11.5 to 25V, T
j
=25C
I
O
=1 to 300mA, T
j
=25C
f=10Hz to 100kHz
V
I
=12 to 22V, I
O
=50mA, f=120Hz
I
O
=300mA, T
j
=25C
V
I
=35V, T
j
=25C
T
j
=25C
I
O
=5mA, T
j
=0 to 125C
T
j
=25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
I
O (Short)
I
O (Peak)
V
O
/Ta
mV/C
Note 1) The specified condition T
j
=25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, V
I
=15V, I
O
=100mA, C
I
=0.33
μ
F, C
O
=0.1
μ
F, T
j
=0 to 125C
I
Electrical Characteristics (Ta=25C)
·
AN78N09 (9V Type)
V
O
V
O
10.4
10.5
V
V
10
REG
IN
100
50
200
100
mV
mV
mV
mV
mA
mA
mA
15
10
REG
L
25
10
2.8
I
bias
70
68
V
no
RR
dB
V
0.8
0.5
5
56
9.6
9.5
2
mA
mA
300
500
– 0.5
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias current fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output short circuit current
Peak output current
Output voltage temperature coefficient
Parameter
Symbol
Condition
min
typ
max
Unit
V
I
=12.5 to 25V, I
O
=5 to 200mA
V
I
=12.5 to 30V, T
j
=25C
V
I
=13 to 25V, T
j
=25C
I
O
=1 to 300mA, T
j
=25C
I
O
=5 to 200mA, T
j
=25C
T
j
=25C
V
I
=12.5 to 30V, T
j
=25C
I
O
=1 to 300mA, T
j
=25C
f=10Hz to 100kHz
V
I
=13 to 23V, I
O
=50mA, f=120Hz
I
O
=300mA, T
j
=25C
V
I
=35V, T
j
=25C
T
j
=25C
I
O
=5mA, T
j
=0 to 125C
T
j
=25C
I
bias (IN)
I
bias (L)
μ
V
V
DIF (min.)
I
O (Short)
I
O (Peak)
V
O
/Ta
mV/C
Note 1) The specified condition T
j
=25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, V
I
=16V, I
O
=100mA, C
I
=0.33
μ
F, C
O
=0.1
μ
F, T
j
=0 to 125C
·
AN78N10 (10V Type)
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