參數(shù)資料
型號(hào): AMS5010KT
廠商: Advanced Monolithic Systems, Inc.
英文描述: MOSFET, N, D-PAK; Transistor type:MOSFET; Current, Id cont:40A; Resistance, Rds on:0.0085R; Case style:D-Pak (TO-252); Case style, alternate:D-PAK; Current, Idm pulse:100A; Power dissipation:71W; Power, Pd:71W; Power, Ptot:71W; RoHS Compliant: Yes
中文描述: 1.2V的電壓基準(zhǔn)
文件頁數(shù): 2/2頁
文件大小: 17K
代理商: AMS5010KT
Advanced Monolithic Systems, Inc.
6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
AMS5010
ABSOLUTE MAXIMUM RATINGS
Reverse Current
Forward Current
Operating Temperature Range
NT, MT, LN, HN, GN
LT, KT, JT
10mA
10mA
Storage Temperature TO-92 package
Storage Temperature TO-52 package
Lead Temperature (Soldering 10 sec.)
Maximum Power Dissipation (at 25
°
C)
TO-52
TO-92
-65
°
C to +150
°
C
-65
°
C to +200
°
C
260
°
C
0
°
C to 70
°
C
-55
°
C to +125
°
C
750mW
600mW
ELECTRICAL CHARACTERISTICS
Electrical Characteristics at I
R
= 500
μ
A, and T
A
= +25°C unless otherwise specified.
Parameter
Conditions
AMS5010
Min Typ Max
Units
Reference Voltage
I
R
= 100
μ
A
1.20
1.220
1.25
V
Reference Current (Note 3)
50
100
5000
μ
A
Reverse Current
To rated specs.
50
100
μ
A
Dynamic Output Impedance
I
R
= 100
μ
A
I
R
= 500
μ
A
.6
.6
2
RMS Noise Voltage
(Note 4)
I
R
= 500
μ
A,
10Hz
f
10kHz
5
μ
V
Temperature Coefficient
(Note 5)
AMS5010G – J
AMS5010H – K
AMS5010L
AMS5010M
AMS501N
50
μ
A
I
R
5mA
T
MIN
T
A
T
MAX
30
25
10
5
3
100
50
25
10
5
ppm/°C
ppm/°C
ppm/°C
ppm/°C
ppm/°C
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics
.
The
guaranteed specifications apply only for the test conditions listed.
Note 2:
For elevated temperature operation, T
j
max is
+150°C
Thermal Resistance
JA
(junction to ambient)
TO-92
TO-52
140°C/W
170°C/W (0.125” leads)
Note 3:
Optimum performance is obtained at currents below 500
μ
A. For current operation below 200
μ
A, stray shunt capacitances should be limited to 20pF or
increased to 1
μ
F. If strays can not be avoided, a shunt capacitor of at least 1000pF is recommended.
Note 4:
Guaranteed but not 100% production tested. These limits are not used to calculate average outgoing quality levels.
Note 5:
The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating T
MAX
and T
MIN
, divided by T
MAX
- T
MIN
.
相關(guān)PDF資料
PDF描述
AMS5010LN 1.2V VOLTAGE REFERENCE
AMS5010LT 1.2V VOLTAGE REFERENCE
AMS5010MT MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:40A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No
AMS5010NT 1.2V VOLTAGE REFERENCE
AMS5105 500mA CMOS LOW DROPOUT VOLTAGE REGULATOR
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