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參數(shù)資料
| 型號： | AMP02FSZ-RL |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 0K |
| 描述： | IC AMP INST PREC LDRIFT 16SOIC |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 放大器類型： | 儀表 |
| 電路數(shù)： | 1 |
| 轉(zhuǎn)換速率： | 6 V/µs |
| -3db帶寬： | 1.2MHz |
| 電流 - 輸入偏壓： | 4nA |
| 電壓 - 輸入偏移： | 40µV |
| 電流 - 電源： | 5mA |
| 電流 - 輸出 / 通道： | 32mA |
| 電壓 - 電源，單路/雙路(±)： | ±4.5 V ~ 18 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SOIC W |
| 包裝： | 帶卷 (TR) |
REV. E
–4–
AMP02
1. RG1
2. –IN
3. +IN
4. V–
5. REFERENCE
6. OUT
7. V+
8. RG2
9. SENSE
CONNECT SUBSTRATE TO V–
8
1
DIE SIZE 0.103 inch
0.116 inch, 11,948 sq. mils
(2.62 mm
2.95 mm, 7.73 sq. mm)
NOTE: PINS 1 and 8 are KELVIN CONNECTED
Die Characteristics
WAFER TEST LIMITS* (@ V
S =
15 V, VCM = 0 V, TA = 25 C, unless otherwise noted.)
AMP02 GBC
Parameter
Symbol
Conditions
Limits
Unit
Input Offset Voltage
VIOS
200
V max
Output Offset Voltage
VOOS
8
mV max
VS =
±4.8 V to ±18 V
G = 1000
110
Power Supply
PSR
G = 100
110
dB
Rejection
G = 10
95
G = 1
75
Input Bias Current
IB
20
nA max
Input Offset Current
IOS
10
nA max
Input Voltage Range
IVR
Guaranteed by CMR Tests
±11
V min
VCM =
±11 V
G = 1000
110
Common-Mode
CMR
G = 100
110
dB
Rejection
G = 10
95
G = 1
75
Gain Equation Accuracy
G
=
50 k
R G
+1, G =1000
0.7
% max
Output Voltage Swing
VOUT
RL = 1 k
±12
V min
Supply Current
ISY
6
mA max
*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AMP02 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
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