參數(shù)資料
型號: AMMC-6430
元件分類: 放大器
英文描述: 25000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 0.100 X 0.074 INCH, 0.004 INCH HEIGHT, DIE
文件頁數(shù): 5/7頁
文件大?。?/td> 627K
代理商: AMMC-6430
Assembly Techniques
ThebacksideoftheMMICchipisRFground.Formicrostrip
applicationsthechipshouldbeattacheddirectlytothe
groundplane(e.g.circuitcarrierorheatsink)usingelectri-
callyconductiveepoxy[1]
Forbestperformance,thetopsideoftheMMICshouldbe
broughtuptothesameheightasthecircuitsurrounding
it.Thiscanbeaccomplishedbymountingagoldplate
metalshim(samelengthandwidthastheMMIC)under
thechipwhichisofcorrectthicknesstomakethechip
and adjacent circuit the same height. The amount of
epoxyusedforthechipand/orshimattachmentshould
bejustenoughtoprovideathinfilletaroundthebottom
perimeterofthechiporshim.Thegroundplainshould
befreeofanyresiduethatmayjeopardizeelectricalor
mechanicalattachment.
ThelocationoftheRFbondpadsisshowninFigure12.
NotethatalltheRFinputandoutputportsareinaGround-
Signalconfiguration.
RFconnectionsshouldbekeptasshortasreasonableto
minimizeperformancedegradationduetoundesirable
seriesinductance.Asinglebondwireisnormallysufficient
forsignalconnections,howeverdoublebondingwith0.7
milgoldwireoruseofgoldmesh[2]isrecommended
forbestperformance,especiallynearthehighendofthe
frequencyband.
Thermosonicwedgebondingispreferredmethodforwire
attachmenttothebondpads.Goldmeshcanbeattached
usinga2milroundtrackingtoolandatoolforceofap-
proximately22gramsandaultrasonicpowerofroughly
55dBforadurationof76+/-8mS.Theguidedwedgeat
anuntrasonicpowerlevelof64dBcanbeusedfor0.7mil
wire.Therecommendedwirebondstagetemperatureis
150+/-2C.
CautionshouldbetakentonotexceedtheAbsoluteMaxi-
mumRatingforassemblytemperatureandtime.
Thechipis100umthickandshouldbehandledwithcare.
ThisMMIChasexposedairbridgesonthetopsurfaceand
shouldbehandledbytheedgesorwithacustomcollet
(donotpickupthediewithavacuumondiecenter).
This MMIC is also static sensitive and ESD precautions
shouldbetaken.
Notes:
[1] Ablebond84-1LM1silverepoxyisrecommended.
[2] Buckbee-MearsCorporation,St.Paul,MN,800-262-3824
Biasing and Operation
TherecommendedquiescentDCbiasconditionforop-
timum efficiency, performance, and reliability is Vd=5
voltswithVgsetforId=650mA.Minorimprovementsin
performancearepossibledependingontheapplication.
Thedrainbiasvoltagerangeis3to5V.AsingleDCgate
supplyconnectedtoVgwillbiasallgainstages.Muting
can be accomplished by setting Vg and /or Vg to the
pinch-offvoltageVp.
An optional output power detector network is also
provided.The differential voltage between the Det-Ref
andDet-OutpadscanbecorrelatedwiththeRFpower
emergingfromtheRFoutputport.Thedetectedvoltage
isgivenby:
(
)
ofs
ref
V
=
det
where ref
V isthevoltageatthe
R
DET _ port, det
V isavoltage
atthe
O
DET _ port,and ofs
V isthezero-input-poweroffset
voltage.Therearethreemethodstocalculate:
1. ofs
V canbemeasuredbeforeeachdetectormeasure-
ment(byremovingorswitchingoffthepowersource
andmeasuring).Thismethodgivesanerrordueto
temperaturedriftoflessthan0.01dB/50°C.
2. ofs
V canbemeasuredatasinglereferencetemperature.
Thedrifterrorwillbelessthan0.25dB.
3. ofs
V caneitherbecharacterizedovertemperatureand
storedinalookuptable,oritcanbemeasuredattwo
temperaturesandalinearfitusedtocalculateatany
temperature.Thismethodgivesanerrorclosetothe
method#1.
TheRFportsareACcoupledattheRFinputtothefirststage
andtheRFoutputofthefinalstage.Nogroundwiredare
neededsincegroundconnectionsaremadewithplated
through-holestothebacksideofthedevice.
相關(guān)PDF資料
PDF描述
AMMC-6530-W10 5000 MHz - 30000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8 dB CONVERSION LOSS-MAX
AMMP-5618-BLK 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMP-5618-TR1 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMP-5618-TR2 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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