參數(shù)資料
型號(hào): AMMC-6345
廠商: AGILENT TECHNOLOGIES INC
元件分類(lèi): 放大器
英文描述: 20000 MHz - 47000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 0.100 X 0.047 INCH, DIE
文件頁(yè)數(shù): 9/10頁(yè)
文件大?。?/td> 393K
代理商: AMMC-6345
8
Biasing and Operation
AMMC-6345 has quite flexible
drain biasing conditions.
Recommended quiescent DC
bias condition for optimum
power and linearity
performances is Vd=5 volts
with Vg set for Id=480 mA.
For high gain applications, the
AMMC-6345 can be biased at
Vd=3V. Minor improvements in
performance are possible
depending on the application.
The drain bias voltage range is
3 to 5.5V. A single DC gate
supply connected to Vg will
bias all gain stages. Muting
can be accomplished by setting
Vg to the pinch-off voltage Vp.
An optional output power
detector network is also
provided. The differential
voltage between the Det-Ref
and Det-Out pads can be
correlated with the RF power
emerging from the RF output
port. The detected voltage is
given by :
(
)
ofs
ref
V
=
det
where
ref
V is the voltage at the
R
DET _
port,
det
V is a voltage at
the
O
DET _
port, and
ofs
V is the
zero-input-power offset
voltage. There are three
methods to calculate :
1.
ofs
V can be measured before
each detector measurement
(by removing or switching
off the power source and
measuring ). This method
gives an error due to
temperature drift of less
than 0.01dB/50°C.
2.
ofs
V can be measured at a
single reference temperature.
The drift error will be less
than 0.25dB.
3.
ofs
V can either be
characterized over
temperature and stored in a
lookup table, or it can be
measured at two
temperatures and a linear
fit used to calculate at any
temperature. This method
gives an error close to the
method #1.
The RF ports are AC coupled
at the RF input to the first
stage and the RF output of the
final stage. No ground wired
are needed since ground
connections are made with
plated through-holes to the
backside of the device.
Assembly Techniques
The backside of the MMIC
chip is RF ground. For
microstrip applications the
chip should be attached
directly to the ground plane
(e.g. circuit carrier or
heatsink) using electrically
conductive epoxy [1]
For best performance, the
topside of the MMIC should be
brought up to the same height
as the circuit surrounding it.
This can be accomplished by
mounting a gold plate metal
shim (same length and width
as the MMIC) under the chip
which is of correct thickness
to make the chip and adjacent
circuit the same height. The
amount of epoxy used for the
chip and/or shim attachment
should be just enough to
provide a thin fillet around the
bottom perimeter of the chip
or shim. The ground plain
should be free of any residue
that may jeopardize electrical
or mechanical attachment.
The location of the RF bond
pads is shown in Figure 12.
Note that all the RF input and
output ports are in a Ground-
Signal configuration.
RF connections should be kept
as short as reasonable to
minimize performance
degradation due to undesirable
series inductance. A single
bond wire is normally
sufficient for signal
connections, however double
bonding with 0.7 mil gold wire
or use of gold mesh [2] is
recommended for best
performance, especially near
the high end of the frequency
band.
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AMMC-6408-W50 功能描述:射頻放大器 Amp MMIC 6-18GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
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