AMIS30660
http://onsemi.com
3
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
Supply Voltage
0.3
+7
V
VCANH
DC Voltage at Pin CANH
0 < VCC < 5.25 V;
No Time Limit
45
+45
V
VCANL
DC Voltage at Pin CANL
0 < VCC < 5.25 V;
No Time Limit
45
+45
V
VTxD
DC Voltage at Pin TxD
0.3
VCC + 0.3
V
VRxD
DC Voltage at Pin RxD
0.3
VCC + 0.3
V
VS
DC Voltage at Pin S
0.3
VCC + 0.3
V
Vref
DC Voltage at Pin VREF
0.3
VCC + 0.3
V
Vtran(CANH)
Transient Voltage at Pin CANH
150
+150
V
Vtran(CANL)
Transient Voltage at Pin CANL
150
+150
V
Vesd
Electrostatic Discharge Voltage at All Pins
4
500
+4
+500
kV
V
Latchup
Static Latchup at All Pins
100
mA
Tstg
Storage Temperature
55
+155
°C
Tamb
Ambient Temperature
40
+125
°C
TJunc
Maximum Tunction Temperature
40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4).
3. Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.
4. Static latchup immunity: static latchup protection level when tested according to EIA/JESD78.
5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.31993.
Table 4. THERMAL CHARACTERISTICS
Symbol
Parameter
Conditions
Value
Unit
Rth(vja)
Thermal Resistance from JunctiontoAmbient in SOIC8
Package
In Free Air
150
K/W
Rth(vjs)
Thermal resistance from JunctiontoSubstrate of Bare Die
In Free Air
45
K/W
AMIS
30660
CANH
CANL
GND
RxD
TxD
Vref
2
1
3
45
6
7
8
PC20040918.2
VCC
S
CAN
controller
VBAT
5Vreg
IN
OUT
47 nF
60 W
CAN
BUS
47 nF
60 W
VCC
GND
Figure 2. Application Diagram