參數(shù)資料
型號： AM50DL9608GT70IT
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA73
封裝： 8 X 11.60 MM, FBGA-73
文件頁數(shù)： 2/70頁
文件大?。?/td> 479K
代理商： AM50DL9608GT70IT
PRELIMINARY
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice. 5/19/03
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
27025
Issue Date:
May 19, 2003
Rev:
A
Amendment/
+4
Am50DL9608G
Stacked Multi-Chip Package (MCP) Flash Memory and Pseudo SRAM
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and
8 Mbit (512 K x 16-Bit) Pseudo Static RAM
DISTINCTIVE CHARACTERISTICS
MCP Features
Power supply voltage of 2.7 to 3.3 volt
■
■
High performance
— Flash access time as fast as 70 ns
— Pseudo SRAM access time as fast as 55 ns
Package
— 73-Ball FBGA
Operating Temperature
— –40°C to +85°C
■
■
Flash Memory Features
(Am29DL640G/Am29DL320G)
— Features apply to Am29DL640G and Am29DL320G
independently.
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
■
Flexible Bank
architecture
— Read may occur in any of the three banks not being written
or erased.
— Four banks may be grouped by customer to achieve desired
bank divisions.
■
Manufactured on 0.17 μm process technology
SecSi (Secured Silicon) Sector
— Extra 256 byte sector on Am29DL640G
— Extra 256 byte sector on Am29DL320G
—
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function. ExpressFlash
option allows entire sector to be available for
factory-secured data
—
Customer lockable:
Sector is one-time programmable.
Once sector is locked, data cannot be changed.
■
Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero.
■
Boot sectors
— Top and bottom boot sectors in Am29DL640G
— Top or bottom boot options in Am29DL320G
■
Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply
flash standard
■
■
PERFORMANCE CHARACTERISTICS
High performance
■
— Access time as fast as 70 ns
— Program time: 4 μs/word typical utilizing Accelerate function
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Minimum 1 million erase cycles guaranteed per sector
20 year data retention at 125
°
C
— Reliable operation for the life of the system
■
■
■
SOFTWARE FEATURES
Supports Common Flash Memory Interface (CFI)
■
■
Program/Erase Suspend/Erase Resume
— Suspends program/erase operations to allow
programming/erasing in same bank
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■
HARDWARE FEATURES
Any combination of sectors can be erased
■
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle
completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state machine to
the read mode
WP#/ACC input pin
— Write protect (WP#) protects sectors 0, 1, 140, and 141 in
Am29DL640G, and two outermost boot sectors in
Am29DL320G
— Acceleration (ACC) function accelerates program timing
Sector protection
— Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
erase operation within that sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
■
■
■
Pseudo SRAM Features
Power dissipation
— Operating: 30 mA maximum
— Standby: 60 μA maximum
■
CE1s# and CE2s Chip Select
Power down features using CE1s# and CE2s
Data retention supply voltage: 2.7 to 3.3 volt
Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
■
■
■
■
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