- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375308 > AM49PDL640AG70NS (SPANSION LLC) 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM PDF資料下載
參數(shù)資料
| 型號： | AM49PDL640AG70NS |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA73 |
| 封裝： | 13 X 9 MM, FBGA-73 |
| 文件頁數(shù)： | 44/69頁 |
| 文件大?。?/td> | 491K |
| 代理商： | AM49PDL640AG70NS |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁當(dāng)前第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁
42
Am49PDL640AG
November 20, 2003
P R E L I M I N A R Y
pSRAM DC AND OPERATING CHARACTERISTICS (NOTE 1)
Notes:
1. Overshoot: VCC + 2.0 V in case of pulse width
≤
20 ns.
2. Undershoot: -2.0 V in case of pulse width
≤
20 ns.
3. Not 100% Tested
4. For Si-7 pSRAM, Deep Power-down Standby is not available.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
–1.0
1.0
μA
I
LO
Output Leakage Current
CE#1s = V
IH
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
–1.0
1.0
μA
I
CC1
s
Operating Current at Minimum
Cycle Time
Cycle time = Min., 100% duty
I
IO
= 0 mA, CE#1
≤
0.2 V,
CE2
≥
V
DD
-0.2 V, V
IN
≤
0.2 V
or V
IN
≥
V
DD
-0.2 V
Cycle time = 1
μ
s, 100% duty
I
IO
= 0 mA, CE#1 = V
IL
,
CE2 = V
IH
, V
IN
= V
IH
or V
IL
30
I
CC2
s
Operating Current at Maximum
Cycle Time
3
V
IL
Input Low Voltage
–0.2
(Note 2)
0.6
V
V
IH
Input High Voltage
2.2
V
CC
+0.2
(Note 1)
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH
= –1.0 mA
2.4
V
I
SB
Standby Current (TTL)
CE#1s = V
IH
,
CE2 = V
IL
, Other
inputs = V
IH
or V
IL
0.3
mA
I
SB1
Standby Current (CMOS)
CE1# = V
DD
-0.2 V and
CE2 = V
DD
-0.2 V,
Other inputs = V
SS
~ V
CC
CE2
≤
0.2 V,
Other Inputs = V
SS
~ V
CC
100
μA
I
SBD
Deep Power Down (Note 4)
10
μA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM49PDL640AG70NT | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
| AM49PDL640AG85NS | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
| AM49PDL640AG85NT | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
| AM49PDL640AGA70NS | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
| AM49PDL640AGA70NT | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM49PDL640AG70NT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
| AM49PDL640AG85NS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
| AM49PDL640AG85NT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
| AM49PDL640AGA70NS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
| AM49PDL640AGA70NT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。