參數(shù)資料
型號(hào)： AM49LV6408MT11IT
廠商： SPANSION LLC
元件分類： 存儲(chǔ)器
英文描述： Stacked Multi-chip Package (MCP) 64 Mbit (4 M x 16 bit) Flash Memory and 8 Mbit (512K x 16-Bit)
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA69
封裝： 10 X 8 MM, 1.20 MM HEIGHT, FBGA-69
文件頁數(shù)： 41/63頁
文件大小： 540K
代理商： AM49LV6408MT11IT
November 5, 2003
Am49LV6408M
39
A D V A N C E I N F O R M A T I O N
DC Characteristics
CMOS Compatible
Notes:
1.
On the WP#/ACC pin only, the maximum input load current when
WP# = V
IL
is ± 5.0 μA.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at
V
IH
.
Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
I
active while Embedded Erase or Embedded Program is in
progress.
Automatic sleep mode enables the low power mode when
addresses remain stable for t
ACC
+ 30 ns.
2.
3.
4.
5.
6.
If V
IO
< V
CC
, maximum V
for CE# and DQ I/Os is 0.3 V
. If V
IO
<
V
for CE# and DQ I/Os is 0.7 V
IO
. Maximum V
IH
for these connections is V
IO
+ 0.3 V
V
CC
voltage requirements.
V
IO
voltage requirements.
Includes RY/BY#
10. Not 100% tested.
7.
8.
9.
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current (1)
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±1.0
μA
I
LIT
A9, ACC Input Load Current
V
CC
= V
CC max
; A9 = 12.5 V
35
μA
I
LR
Reset Leakage Current
V
CC
= V
CC max
; RESET# = 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±1.0
μA
I
CC1
V
CC
Active Read Current (2, 3)
CE# = V
IL,
OE# = V
IH
,
5 MHz
15
20
mA
1 MHz
15
20
I
CC2
V
CC
Initial Page Read Current (2, 3)
CE# = V
IL,
OE# = V
IH
30
50
mA
I
CC3
V
CC
Intra-Page Read Current (2, 3)
CE# = V
IL,
OE# = V
IH
10
20
mA
I
CC4
V
CC
Active Write Current (3, 4)
CE# = V
IL,
OE# = V
IH
50
60
mA
I
CC5
V
CC
Standby Current (3)
CE#, RESET# = V
CC
± 0.3 V,
WP# = V
IH
1
5
μA
I
CC6
V
CC
Reset Current (3)
RESET# = V
SS
± 0.3 V, WP# = V
IH
1
5
μA
I
CC7
Automatic Sleep Mode (3, 5)
V
IH
= V
CC
± 0.3 V;
V
IL
= V
SS
± 0.3 V, WP# = V
IH
1
5
μA
V
IL1
Input Low Voltage 1(6, 7)
–0.5
0.8
V
V
IH1
Input High Voltage 1 (6, 7)
1.9
V
CC
+ 0.5
V
V
IL2
Input Low Voltage 2 (6, 8)
–0.5
0.3 x V
IO
V
V
IH2
Input High Voltage 2 (6, 8)
1.9
V
IO
+ 0.5
V
V
HH
Voltage for ACC Program Acceleration
V
CC
= 2.7 –3.6 V
11.5
12.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 2.7 –3.6 V
11.5
12.5
V
V
OL
Output Low Voltage (9)
I
OL
= 4.0 mA, V
CC
= V
CC min
= V
IO
0.15 x V
IO
V
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
= V
CC min
= V
IO
0.85 V
IO
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
= V
IO
V
IO
–0.4
V
V
LKO
Low V
CC
Lock-Out Voltage (10)
2.3
2.5
V
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