參數(shù)資料
型號: AM49LV6408MB15IT
廠商: SPANSION LLC
元件分類: 存儲器
英文描述: Stacked Multi-chip Package (MCP) 64 Mbit (4 M x 16 bit) Flash Memory and 8 Mbit (512K x 16-Bit)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA69
封裝: 10 X 8 MM, 1.20 MM HEIGHT, FBGA-69
文件頁數(shù): 54/63頁
文件大?。?/td> 540K
代理商: AM49LV6408MB15IT
52
Am49LV6408M
November 5, 2003
A D V A N C E I N F O R M A T I O N
AC Characteristics
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. For 1–16 words programmed.
4. Effective write buffer specification is based upon a 16-word write buffer operation.
5. Word programming specification is based upon a single word programming operation not utilizing the write buffer.
Parameter
Speed Options
JEDEC
Std.
Description
10, 15
11
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
352
μs
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
22
μs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Word
Typ
17.6
μs
Single Word/Byte Program Operation
(Note 2, 5)
Word
Typ
100
Single Word/Byte Accelerated
Programming Operation (Note 2, 5)
Word
Typ
90
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
RH
RESET# High Time Before Write
Min
50
ns
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