參數(shù)資料
型號(hào): AM49LV128BML15NT
廠商: SPANSION LLC
元件分類: 存儲(chǔ)器
英文描述: 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA64
封裝: 12 X 9 MM, FBGA-64
文件頁(yè)數(shù): 78/98頁(yè)
文件大?。?/td> 1016K
代理商: AM49LV128BML15NT
76
Am49LV128BM
June 17, 2004
AM49LV128BM MCP WITH SECOND PSRAM SUPPLIER
PSRAM BLOCK DIAGRAM
Note: ZZ# = CE2pS on MCP pin-out.
FUNCTION TRUTH TABLE
Note:
1.
When UB# and LB# are in select mode (low), I/O
0
- I/O
15
are
affected as shown. When LB# only is in the select mode only I/O
0
- I/
O
7
are affected as shown. When UB# is in the select mode only I/O
8
- I/O
15
are affected as shown.
When the device is in standby mode, control inputs (WE#, OE#,
UB#, and LB#), address inputs and data input/outputs are
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
2.
internally isolated from any external influence and disabled from
exerting any influence externally.
3.
When WE# is invoked, the OE# input is internally disabled and
has no effect on the circuit.
Note:
1.
Stresses greater than those listed above may cause permanent
damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those
indicated in the operating section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Mode
CE#
H
X
L
L
L
X
ZZ#
H
H
H
H
H
L
WE#
X
X
L
H
H
X
OE#
X
X
UB#
X
H
LB#
X
H
I/O
0
- I/O
15
(Note1)
High-Z
High-Z
Data In
Data Out
High-Z
High-Z
POWER
Standby
Standby
Active
Active
Active
Deep Sleep
Standby (Note 2)
Standby (Note 2)
Write
Read
Active
Deep Sleep
X (Note 3)
L
H
X
L (Note 1) L (Note 1)
L (Note 1) L (Note 1)
L
X
L
X
Item
Symbol
V
IN,OUT
V
CC
P
D
T
STG
T
A
Rating
Unit
V
V
W
o
C
o
C
Voltage on any pin relative to V
SS
Voltage on VCC Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
–0.2 to V
CC
+0.3
–0.2 to 3.6
1
–40 to 125
-25 to +85
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