參數(shù)資料
型號： AM49LV128BMAL11NT
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA64
封裝： 12 X 9 MM, FBGA-64
文件頁數(shù)： 29/98頁
文件大?。?/td> 1016K
代理商： AM49LV128BMAL11NT
June 17, 2004
Am49LV128BM
27
Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
Write to an address in a sector different than the
one specified during the Write-Buffer-Load com-
mand.
Write an Address/Data pair to a different write-
buffer-page than the one selected by the Starting
Address during the write buffer data loading stage
of the operation.
Write data other than the Confirm Command after
the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
command sequence must be written to reset the de-
vice for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is re-
quired when using Write-Buffer-Programming features
in Unlock Bypass mode.
Programming is allowed in any sequence and across
sector boundaries.
A bit cannot be programmed
from “0” back to a “1.”
Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was suc-
cessful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a
“0” to a “1.”
Accelerated Program
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
V
HH
on the WP#/ACC pin, the device automatically
enters the Unlock Bypass mode. The system may
then write the two-cycle Unlock Bypass program com-
mand sequence. The device uses the higher voltage
on the WP#/ACC pin to accelerate the operation.
Note
that the
WP#/
ACC pin must not be at V
HH
for opera-
tions other than accelerated programming, or device
damage may result. WP# has an internal pullup; when
unconnected, WP# is at V
IH
.
Figure 5 illustrates the algorithm for the program oper-
ation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 17 for timing diagrams.
相關(guān)PDF資料
PDF描述
AM49LV128BMAL15NS 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMAL15NT 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMH11NS 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMH11NT 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMH15NS 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM49LV128BMAL15NS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMAL15NT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMH11NS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMH11NT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMH15NS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
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