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參數(shù)資料
| 型號： | AM49LV128BMAH15NT |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA64 |
| 封裝： | 12 X 9 MM, FBGA-64 |
| 文件頁數(shù)： | 98/98頁 |
| 文件大?。?/td> | 1016K |
| 代理商： | AM49LV128BMAH15NT |
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96
Am49LV128BM
June 17, 2004
Deleted “Full Die” from table.
“Address Patterns for PAR (A3 = 0, A4 = 1)” on
page 91
Added “Full Die” to table.
“Timing” on page 79
Changed “Chip Disable to High-Z Output - Max” to 5.
Changed “Output Disable to High-Z Output - Max” to
5.
Changed “Byte Select Disable to High-Z Output - Max”
to 5.
Changed “Write to High-Z Output - Max” to 5.
“Operating Characteristics (Over Specified
Temperature Range)” on page 77
Changed “Supply Voltage for I/O - Min” to 7.7.
Changed “Input High Voltage - Min” to 0.8.
Changed “Output High Voltage - Max” to 0.2.
Changed “Output Low Voltage - Test Condition”
to...=0.5mA.hanged “Output Low Voltage - Max.” to
0.2VccQ.
Changed “Input Leakage Current - Min.” to -1.
Changed “Input Leakage Current - Max.” to 1.
Changed “Output Leakage Current - Min.” to -1
Changed “Output Leakage Current - Max.” to 1.
Changed “Read/Write Operating Supply Current
@1...-Test Condition” to Vcc=3.1V...
Changed “Read/Write Operating Supply Current
@65...-Test Condition” to Vcc=3.1V...
Changed “Page Mode Operating Supply Current. -
Test Condition” to Vcc=3.1V...
Changed “Page Mode Operating Supply Current. -
Max.” to 25.0
Changed “Maximum Standby Current - Test Condition”
to Vcc=3.1V...
Changed “Maximum Standby Current - Max.” to 120.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable ( i.e., submersible repeater and artificial satellite). Please note that FASL will not be liable to you
and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices
have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures
into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating condi-
tions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Ex-
change and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior
authorization by the respective government entity will be required for export of those products.
Trademarks
Copyright 2003–2004 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM49LV128BMAL11NS | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL11NT | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL15NS | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL15NT | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMH11NS | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM49LV128BMAL11NS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL11NT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL15NS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL15NT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMH11NS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
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