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參數(shù)資料
| 型號： | AM49DL640BH70IT |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA73 |
| 封裝： | 8 X 11.60 MM, FBGA-73 |
| 文件頁數(shù)： | 57/63頁 |
| 文件大?。?/td> | 660K |
| 代理商： | AM49DL640BH70IT |
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December 5, 2003
Am49DL640BH
55
A D V A N C E I N F O R M A T I O N
pSRAM AC CHARACTERISTICS
Write Cycle
Notes:
1. If the device is using the I/Os to output data, input signals of reverse polarity must not be applied.
2. If OE# is high during the write cycle, the outputs will remain at high impedance.
3. If CE#1ps, LB# or UB# goes low at the same time or after WE# goes low, the outputs will remain at high impedance.
4. If CE#1ps, LB# or UB# goes high at the same time or before WE# goes high, the outputs will remain at high impedance.
Figure 31.
Pseudo SRAM Write Cycle—WE# Control
Parameter
Symbol
Description
Speed
Unit
56
70
85
t
WC
t
WP
t
CW
t
BW
t
AW
t
AS
t
WR
t
ODW
t
OEW
t
DS
t
DH
t
CH
t
CEH
t
WEH
Write Cycle Time
Min
70
85
ns
Write Pulse Time
Min
50
60
ns
Chip Enable to End of Write
Min
60
70
ns
Data Byte Control to End of Write
Min
60
70
ns
Address Valid to End of Write
Min
60
70
ns
Address Setup Time
Min
0
ns
Write Recovery Time
Min
0
ns
WE# Low to Write to Output High-Z
Max
20
ns
WE# High to Write to Output Active
Min
0
ns
Data Set-up Time
Min
30
Data Hold from Write Time
Min
0
ns
CE2 Hold Time
Min
300
μs
Chip Enable High Pulse Width
Min
10
ns
Write Enable High Pulse Width
Min
6
ns
t
WC
t
WP
t
AW
t
WEH
t
WR
t
CW
t
BW
Valid Data In
t
AS
t
CH
t
OEW
Addresses
A20 to A0
WE#
CE#1s
CE2s
LB#, UB#
D
IN
DQ15 to DQ0
D
OUT
DQ15 to DQO
t
ODW
t
DS
t
DH
High-Z
(Note 1)
(Note 3)
(Note 4)
相關(guān)PDF資料 |
PDF描述 |
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| AM49DL640BH85IS | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM49DL640BH85IT | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM49LV128BM | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAH11NS | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAH11NT | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM49DL640BH85IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM49DL640BH85IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM49LV128BM | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAH11NS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAH11NT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
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