參數(shù)資料
型號(hào)： AM49DL640BH56IT
廠商： SPANSION LLC
元件分類： 存儲(chǔ)器
英文描述： 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA73
封裝： 8 X 11.60 MM, FBGA-73
文件頁數(shù)： 3/63頁
文件大?。?/td> 660K
代理商： AM49DL640BH56IT
ADVANCE INFORMATION
Am49DL640BH
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Am29DL640H 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
Operation Flash Memory and 32 Mbit (2 M x 16-Bit) Pseudo Static RAM with Page Mode
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication Number:
30775
Revision:
A
Amendment/
+1
Issue Date:
December 5, 2003
DISTINCTIVE CHARACTERISTICS
MCP Features
Power supply voltage of 2.7 to 3.3 volt
■
■
High performance
— Access time as fast as 55 ns
Package
— 73-Ball FBGA
Operating Temperature
— –40°C to +85°C
■
■
Flash Memory Features
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
■
Flexible Bank
architecture
— Read may occur in any of the three banks not being written
or erased.
— Four banks may be grouped by customer to achieve desired
bank divisions.
■
Manufactured on 0.13 μm process technology
SecSi (Secured Silicon) Sector: Extra 256 Byte sector
— Factory locked and identifiable:16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function. ExpressFlash
option allows entire sector to be available for factory-
secured data
— Customer lockable: Sector is one-time programmable. Once
sector is locked, data cannot be changed.
■
Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero.
■
Boot sectors
— Top and bottom boot sectors in the same device
■
Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply
flash standard
■
■
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast as 55 ns
— Program time: 4 μs/word typical utilizing Accelerate function
■
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■
Minimum 1 million write cycles guaranteed per sector
■
■
20 year data retention at 125
°
C
— Reliable operation for the life of the system
SOFTWARE FEATURES
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■
Supports Common Flash Memory Interface (CFI)
■
■
Program/Erase Suspend/Erase Resume
— Suspends program/erase operations to allow programming/
erasing in same bank
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
■
■
HARDWARE FEATURES
Any combination of sectors can be erased
■
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle
completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state machine to
the read mode
WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1, 140, and
141, regardless of sector protect status
— Acceleration (ACC) function accelerates program timing
Sector protection
— Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
erase operation within that sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
■
■
■
pSRAM Features
Power dissipation
— Operating: 40 mA maximum
— Standby: 70 μA maximum
— Deep power-down standby: 5 μA
■
CE1s# and CE2s Chip Select
Power down features using CE1s# and CE2s
Data retention supply voltage: 2.7 to 3.3 volt
Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
8-word page mode access
■
■
■
■
■
相關(guān)PDF資料
PDF描述
AM49DL640BH70IS 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM49DL640BH70IT 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM49DL640BH85IS 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM49DL640BH85IT 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM49LV128BM 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM49DL640BH70IS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM49DL640BH70IT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM49DL640BH85IS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM49DL640BH85IT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM49LV128BM 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*