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參數(shù)資料

型號(hào)：	AM49DL320BGB70IS
廠商：	Spansion Inc.
英文描述：	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
中文描述：	堆疊式多芯片封裝（MCP）閃存和SRAM的32兆位（4個(gè)M × 8位/ 2米x 16位），3.0伏的CMOS只，同時(shí)
文件頁(yè)數(shù)：	2/64頁(yè)
文件大小：	569K
代理商：	AM49DL320BGB70IS

PRELIMINARY

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Refer to AMD’s Website (www.amd.com) for the latest information.

Publication# 26644

Issue Date:

July 19, 2002

Rev:

A

Amendment/

+1

Am49DL320BG

Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

Am29DL320G 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous

Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM with Page Mode

DISTINCTIVE CHARACTERISTICS

MCP Features

Power supply voltage of 2.7 to 3.3 volt

I

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High performance

— Access time as fast as 70 ns

Package

— 73-Ball FBGA

Operating Temperature

— –40°C to +85°C

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Flash Memory Features

ARCHITECTURAL ADVANTAGES

Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in another bank.

— Zero latency between read and write operations

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Flexible Bank

architecture

— Read may occur in any of the three banks not being written

or erased.

— Four banks may be grouped by customer to achieve desired

bank divisions.

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Manufactured on 0.17 μm process technology

SecSi (Secured Silicon) Sector: Extra 256 Byte sector

—

Factory locked and identifiable:

16 bytes available for

secure, random factory Electronic Serial Number; verifiable

as factory locked through autoselect function. ExpressFlash

option allows entire sector to be available for

factory-secured data

—

Customer lockable:

Sector is one-time programmable. Once

sector is locked, data cannot be changed.

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Zero Power Operation

—

Sophisticated power management circuits reduce power

consumed during inactive periods to nearly zero.

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Boot sectors

—

Top and bottom boot sectors in the same device

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Compatible with JEDEC standards

—

Pinout and software compatible with single-power-supply

flash standard

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PERFORMANCE CHARACTERISTICS

High performance

—

Access time as fast as 70 ns

—

Program time: 4 μs/word typical utilizing Accelerate function

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Ultra low power consumption (typical values)

—

2 mA active read current at 1 MHz

—

10 mA active read current at 5 MHz

—

200 nA in standby or automatic sleep mode

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Minimum 1 million write cycles guaranteed per sector

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20 year data retention at 125

°

C

—

Reliable operation for the life of the system

SOFTWARE FEATURES

Data Management Software (DMS)

—

AMD-supplied software manages data programming,

enabling EEPROM emulation

—

Eases historical sector erase flash limitations

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Supports Common Flash Memory Interface (CFI)

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Program/Erase Suspend/Erase Resume

—

Suspends program/erase operations to allow

programming/erasing in same bank

Data# Polling and Toggle Bits

—

Provides a software method of detecting the status of

program or erase cycles

Unlock Bypass Program command

—

Reduces overall programming time when issuing multiple

program command sequences

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HARDWARE FEATURES

Any combination of sectors can be erased

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Ready/Busy# output (RY/BY#)

—

Hardware method for detecting program or erase cycle

completion

Hardware reset pin (RESET#)

—

Hardware method of resetting the internal state machine to

the read mode

WP#/ACC input pin

—

Write protect (WP#) function allows protection of two outermost

boot sectors, regardless of sector protect status

—

Acceleration (ACC) function accelerates program timing

Sector protection

—

Hardware method of locking a sector, either in-system or

using programming equipment, to prevent any program or

erase operation within that sector

—

Temporary Sector Unprotect allows changing data in

protected sectors in-system

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pSRAM Features

Power dissipation

—

Operating: 40 mA maximum

—

Standby: 70 μA maximum

—

Deep power-down standby: 5 μA

I

CE1s# and CE2s Chip Select

Power down features using CE1s# and CE2s

Data retention supply voltage: 2.7 to 3.3 volt

Byte data control: LB#s (DQ7

–

DQ0), UB#s (DQ15

–

DQ8)

8-word page mode access

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相關(guān)PDF資料	PDF描述
AM49DL320BGB70IT	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
AM49DL320BGB851	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
AM49DL320BGB85IS	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
AM49DL320BGB85IT	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
AM49DL320BGT70IS	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
AM49DL320BGB70IT	制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
AM49DL320BGB851	制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
AM49DL320BGB851S	制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM
AM49DL320BGB851T	制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM
AM49DL320BGB85IS	制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous

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