參數(shù)資料
型號: AM41DL32X4GB70IT
廠商: Spansion Inc.
元件分類: 圓形連接器
英文描述: Circular Connector; No. of Contacts:41; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:21-41 RoHS Compliant: No
中文描述: 堆疊式多芯片封裝(MCP)閃存和SRAM
文件頁數(shù): 62/65頁
文件大?。?/td> 1190K
代理商: AM41DL32X4GB70IT
November 12, 2001
Am41DL32x4G
61
P R E L I M I N A R Y
Flash Erase And Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
15 and 17 or further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
FLASH LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
PACKAGE PIN CAPACITANCE
Note:
7.Test conditions T
A
= 25
°
C, f = 1.0 MHz.
FLASH DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
5
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
28
sec
Byte Program Time
5
150
μs
Excludes system level
overhead (Note 5)
Word Program Time
7
210
μs
Accelerated Byte/Word Program Time
4
120
μs
Chip Program Time
(Note 3)
Byte Mode
21
63
sec
Word Mode
14
42
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including OE#, and RESET#)
1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
1.0 V
V
CC
+ 1.0 V
V
CC
Current
100 mA
+100 mA
Parameter
Symbol
Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
11
14
pF
C
OUT
Output Capacitance
V
OUT
= 0
12
16
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
14
16
pF
C
IN3
WP#/ACC Pin Capacitance
V
IN
= 0
17
20
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
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