參數(shù)資料
型號： AM29F800T-120SI
廠商： SPANSION LLC
元件分類： PROM
英文描述： FLASH 5V PROM, PDSO44
封裝： SOP-44
文件頁數(shù)： 5/41頁
文件大?。?/td> 250K
代理商： AM29F800T-120SI
8/18/97
Am29F800T/Am29F800B
13
PR E L IM IN A R Y
Table 7.
Am29F800 Command Definitions
Legend:
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE or CE pulse.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE or CE pulse.
SA = Address of the sector to be erased. Address bits A18–A12 uniquely select any sector.
Notes:
1. All values are in hexadecimal.
2. See Tables 1 and 2 for description of bus operations.
3. The data is 00H for an unprotected sector group and 01H for a protected sector group. The complete bus address is
composed of the sector address (A18–A12), A1 = 1, and A0 = 0.
4. Read and program functions in non-erasing sectors are allowed in the Erase Suspend mode.
5. Address bits A18–A11 are don’t care for unlock and command cycles.
Command
Sequence
Read/Reset
(Note 2)
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second Bus
Read/Write
Cycle
Third Bus Write
Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset/Read
Word
1XXX
XXF0
RA
RD
Byte
F0
Autoselect
Manufacturer ID
Word
3
555
XXAA
2AA
XX55
555
XX90
XX00
XX01
Byte
AAA
AA
555
55
AAA
90
00
01
Autoselect
Device ID
(Top Boot Block)
Word
3
555
XXAA
2AA
XX55
555
XX90
XX01
22D6
Byte
AAA
AA
555
55
AAA
90
02
D6
Autoselect
Device ID
(Bottom Boot
Block)
Word
3
555
XXAA
2AA
XX55
555
XX90
XX01
2258
Byte
AAA
AA
555
55
AAA
90
02
58
Autoselect
Sector Protect
Verify (Note 3)
Word
3
555
XXAA
2AA
XX55
555
XX90
(SA)
X02
XX00
XX01
Byte
AAA
AA
555
55
AAA
90
(SA)
X04
00
01
Byte Program
Word
4
555
XXAA
2AA
XX55
555
XXA0
PA
PD
Byte
AAA
AA
555
55
AAA
A0
Chip Erase
Word
6
555
XXAA
2AA
XX55
555
XX80
555
XXAA
2AA
XX55
555
XX10
Byte
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
Word
6
555
XXAA
2AA
XX55
555
XX80
555
XXAA
2AA
XX55
SA
XX30
Byte
AAA
AA
555
55
AAA
80
AAA
AA
555
55
30
Erase Suspend
(Note 4)
Word
1XXX
XXB0
Byte
B0
Erase Resume
Word
1XXX
XX30
Byte
30
相關(guān)PDF資料
PDF描述
AM29LV001BB-70ED Flash Memory IC; Memory Size:1Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes
AM29LV002BB-120ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29LV002BT-70EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29LV002BT-90ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29LV002BT-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
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