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參數(shù)資料
| 型號： | AM29DL320GT70WMIN |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | DIODE SCHOTTKY HEX COMMON-CATHODE 30V 250mW 0.57V-vf 200mA-IFM 30mA-IF 0.7uA-IR DFN1616-6 3K/REEL |
| 中文描述： | 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封裝： | 6 X 12 MM, 0.80 MM PITCH, FBGA-48 |
| 文件頁數(shù)： | 29/58頁 |
| 文件大?。?/td> | 1239K |
| 代理商： | AM29DL320GT70WMIN |
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September 27, 2004
Am29DL320G
27
pend during the time-out period resets that bank
to the read mode.
The system must rewrite the com-
mand sequence and any additional addresses and
commands.
The system can monitor DQ3 to determine if the sec-
tor erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
data from the non-erasing bank. The system can de-
termine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer
to the Write Operation Status section for information
on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a
hardware
reset
immediately
terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Figure 5
illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations ta-
bles in the AC Characteristics section for parameters,
and
Figure 20
section for timing diagrams.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 50 μs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written dur-
ing the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during
the sector erase operation, the device requires a max-
imum of 20 μs to suspend the erase operation. How-
ever, when the Erase Suspend command is written
during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends the
erase operation.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors pro-
duces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for infor-
mation on these status bits.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The bank
address of the erase-suspended bank is required
when writing this command. Further writes of the Re-
sume command are ignored. Another Erase Suspend
command can be written after the chip has resumed
erasing.
Figure 5.
Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See
Table 13
for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
相關PDF資料 |
PDF描述 |
|---|---|
| AM29DL320GB70WMIN | DIODE SCHOTTKY SINGLE 10V 200mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-323 3K/REEL |
| AM29DL320GT70WMFN | For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. |
| AM29DL320GB70WMFN | For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. |
| AM29DL322GT120WMIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL322GB120EF | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29DL322DB7REIT | 制造商:AMD 功能描述:New |
| AM29DL322DB-90WDIT | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 63FBGA - Tape and Reel |
| AM29DL322DT-90EI-T | 制造商:Advanced Micro Devices 功能描述: |
| AM29DL322GB-90EI | 制造商:Advanced Micro Devices 功能描述:2M X 16 FLASH 3V PROM, 90 ns, 48 Pin Plastic SMT |
| AM29DL322GT-90EI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
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